shottky barrier diode RB715W ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) low current rectification ? features 1) ultra small power mold type. (emd3) 2) low i r 3) high reliability. ? construction ? structure silicon epitaxial planar ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io ma i fsm ma tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit v f - - 0.37 v i f =1ma i r --1 a v r =10v ct - 2.0 - pf v r =1.0v f=1.0mhz capacitance between terminals conditions (*1) rating of per diode parameter forward voltage reverse current junction temperature 125 storage temperature ? 40 to ? 125 average rectified forward current 30 forward current surge peak (60hz ?1cyc) (*1) 200 parameter limits reverse voltage (dc) 40 reverse voltage (repetitive peak) 40 4.00.1 2.00.05 1.550.1 0 3.50.05 1.750.1 8.00.2 0.50.1 1.80.2 0.30.1 1.80.1 5.50.2 0.90.2 00.1 1.5 ? 0.1 ? 0 rohm : emd3 jeita : sc-75a jedec : sot-416 dot (year week factory) (3) 1.60.2 1.60.2 1.00.1 0.80.1 0.5 0.5 (2) (1) 0.150.05 0.70.1 0.550.1 0.1min 00.1 0.20.1 -0.05 0.30.1 0.05 emd3 1.0 0.7 0.5 0.5 0.7 0.7 0.6 0.6 1.3 1/3 2011.04 - rev.c data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RB715W 0 5 10 15 20 1 10 100 8.3ms ifsm 1cyc 8.3ms forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dipersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm dispersion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward current io(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics 0.01 0.1 1 10 100 0 500 1000 1500 ta=125 ta=75 ta=25 ta=-25 0.001 0.01 0.1 1 10 100 1000 0 102030 ta=125 ta=75 ta=25 ta=-25 0 5 10 15 20 ave:7.30a 8.3ms ifsm 1cyc 0 1 2 3 4 5 6 7 8 9 10 1 10 100 t ifsm 0.00 0.01 0.02 0.03 0.04 0.00 0.01 0.02 0.03 0.04 0.05 per diode sin(?180) d=1/2 dc 0 0.001 0.002 0.003 0102030 per diode sin(?180) dc d=1/2 0.1 1 10 0102030 f=1mhz 250 260 270 280 290 300 ave:267.4mv ta=25 if=1ma n=30pcs 10 100 1000 10000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ave:0.083na ta=25 vr=10v n=30pcs 0 1 2 3 4 5 6 7 8 9 10 ave:2.02pf ta=25 f=1mhz vr=0v n=10pcs 2/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB715W ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.02 0.04 0.06 0.08 0.1 0 25 50 75 100 125 per diode sin(?180) d=1/2 dc 0 0.02 0.04 0.06 0.08 0.1 0 25 50 75 100 125 per diode sin(?180) d=1/2 dc t tj=125 d=t/t t vr io vr=20v 0a 0v t tj=125 d=t/t t vr io vr=20v 0a 0v 3/3 2011.04 - rev.c www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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